Electronic origins of dual emission in Mn-doped ZnSe quantum dots

Chúng tôi vui mừng thông báo rằng TS. Phạm Thanh Đảm và các đồng nghiệp đã xuất bản công trình có tựa đề "Electronic origins of dual emission in Mn-doped ZnSe quantum dots” trên tạp chí AIP Advances.

Tóm tắt:

Mn-doped ZnSe quantum dots were synthesized by a hot-injection method and exhibit phase-pure cubic structures with substitutional Mn incorporation. Density functional theory calculations reveal shallow Mn-induced impurity states and p–d hybridization near the valence band, enabling multiple excitation pathways. Optical measurements show band-edge absorption, Mn-related transitions, and dual photoluminescence from ZnSe and Mn²⁺ centers. A combined mechanism involving excitonic energy transfer, defect-assisted relaxation, and host-to-Mn charge transfer explains the observed optical behavior. These results establish a direct link between Mn-induced electronic modifications and the photophysics of ZnSe quantum dots.