ThS. Huỳnh Thị Phương Thuý

1

Huynh Thi Phuong Thuy, Vo Van On, J. Guerrero-Sanchez, D. M. Hoat*; Functionalization of SnS2 monolayer towards spintronic applications by doping with FeXn (X = C and N; n = 1, 3, and 6) clusters; Applied Physics A: Materials Science and Processing; Vol. 131; 13; 2-2025

1432-0630

ISI: SCIE; Scopus

2.9

Q2

2

Hoang Van Ngoc, Vo Van On, Huynh Thi Phuong Thuy, J. Guerrero-Sanchez, D. M. Hoat*; Electronic and magnetic properties of GeP monolayer modulated by Ge vacancies and doping with Mn and Fe transition metals; RSC Advances; Vol. 2025(2); 1020–1032; 1-2025

2046-2069

ISI: SCIE; Scopus

3.9

Q1

3

Hoang Van Ngoc*, Huynh Thi Phuong Thuy; Study of NO, CO, and CO2 gas adsorption on Ni-doped ZnO monolayers for sensing applications; Chemical Physics Letters; Vol. 868; 8; 3-2025

0009-2614

ISI: SCIE; Scopus

2.8

Q2

4

Hoang Van Ngoc*, Huynh Thi Phuong Thuy; Investigation of Be, Mg, Ti–adsorbed boron-germanene nanoribbons for nano applications; Journal of Physics Condensed Matter; Vol. 36(50); 13; 9-2024

1361-648X

ISI: SCIE; Scopus

2.26

Q2

5

Huynh Thi Phuong Thuy, Vo Van On, J. Guerrero-Sanchez, D. M. Hoat*; Modifying the Electronic and Magnetic Properties of ZrO2 Monolayer Through Sp Doping: A First-Principles Study; Advanced Theory and Simulations; Vol. 8(8); 2401253; 12-2024

2513-0390

ISI: SCIE; Scopus

2.9

Q1

6

Vo Van On, Huynh Thi Phuong Thuy, J. Guerrero-Sanchez, D. M. Hoat*; Antiferromagnetic semiconductor nature in a GeS2 monolayer doped with Mn and Fe transition metals; Physical Chemistry Chemical Physics; Vol. 2025(3); ; 12-2024

1463-9084

ISI: SCIE; Scopus

2.9

Q2

7

Hoang Van Ngoc*, Huynh Thi Phuong Thuy, Dinh Hai Lam; The Optoelectronic Properties of AS-Doped 1d Germanene for Potential Applications; Nano; Vol. 20(10); 2450136; 9-2024

1793-7094

ISI: SCIE; Scopus

1.1

Q3

8

Huynh Thi Phuong Thuy; Comparison of magneto-optical transport properties due to piezoelectric phonon scattering in rectangular, parabolic, and semiparabolic GaAs-based quantum wells; Micro and Nanostructures; Vol. 198; 208059; 12-2024

2773-0123

ISI: SCIE; Scopus

2.7

Q2

9

Huynh Thi Phuong Thuy, Vo Van On, J. Guerrero-Sanchez, D. M. Hoat*; Effects of vacancy and Ge substitution in Janus Si2PAs monolayer: site-dependent electronic and magnetic properties; Applied Physics A: Materials Science and Processing; Vol. 130, 19 July 2024;; 606; 7-2024

1432-0630

ISI: SCIE; Scopus

2.56

Q2

10

Huynh Thi Phuong Thuy, Vo Van On, R. Ponce-Pérez, J. Guerrero-Sanchez, D.M. Hoat*; Synergistic effects of vacancy and doping at Ge sublattices on the electronic and magnetic properties of new Janus Ge2PAs monolayer; Materials Science in Semiconductor Processing; Vol. 184; 108826; 8-2024

1369-8001

ISI: SCIE; Scopus

4.2

Q1

11

Huỳnh Thị Phương Thúy, Vo Van On, J. Guerrero-Sanchez, and D. M. Hoat; Effects of vacancy and Ge substitution in Janus Si2PAs monolayer: Site-dependent electronic and magnetic properties; Applied Physics A: Materials Science and Processing; 571; 1-10; 7-2024

09478396-14320630

ISI: SCI

2.5

Q2

12

Huynh Thi Phuong Thuy, Vo Van On, D. M. Hoat*; Effects of vacancy and Ge substitution in Janus Si2PAs monolayer: site-dependent electronic and magnetic properties; Applied Physics A: Materials Science and Processing; Vol. 130; ; 7-2024

1432-0630

ISI: SCIE; Scopus

2.8

Q2

13

Hoang Van Ngoc*, Huynh Thi Phuong Thuy, Vo Van On; Potential optoelectronic applications of C and Si-doped germanene nanoribbons; Materials Today Communications; Vol 3624; 10; 6-2023

2352-4928

ISI: SCIE; Scopus

3.8

Q2

14

Vo Van On, Huynh Thi Phuong Thuy, Hoang Van Ngoc, J. Guerrero-Sanchez, D. M. Hoat*; ZrSe2-HfSe2 lateral heterostructures: stability, fundamental properties, and interline defects; Applied Physics A: Materials Science and Processing; ; ; 3-2023

1432-0630

ISI: SCIE; Scopus

2.7

Q2

15

Hoang Van Ngoc, Huynh Thi Phuong Thuy; Electrical and optical properties of C, Ge-doped armchair silicene nanoribbons applied in optoelectronics; Journal of Physics Condensed Matter; Vol 35(38); 38; 6-2023

1361-648X

ISI: SCIE; Scopus

2.7

Q2

16

Vo Van On, Huynh Thi Phuong Thuy, Hoang Van Ngoc, Nguyen Thanh Tung, Duy Khanh Nguyen*; Feature-rich structural and electronic properties of halogen-functionalized germanene nanoribbons: A DFT study; Materials Today Communications; Vol 33; ; 8-2023

2352-4928

ISI: SCIE; Scopus

3.8

Q2

17

Vo Van On, Hoang Van Ngoc, Huynh Thi Phuong Thuy, J. Guerrero-Sanchez, D.M. Hoat; An investigation on the stability, electronic, and optical properties of new MoSO–WSO lateral heterostructures; Applied Surface Science; Volume 613; ; 3-2023

1873-5584

6.2

18

Vo Van On, Hoang Van Ngoc, Huynh Thi Phuong Thuy, J. Guerrero-Sanchez, D.M. Hoat; An investigation on the stability, electronic, and optical properties of new MoSO–WSO lateral heterostructures; Applied Surface Science; Vol 613; ; 12-2022

0169-4332

ISI: SCIE; Scopus

6.7

Q1