Electron–interface-phonon interaction strength in Pöschl–Teller quantum wells is enhanced considerably compared to rectangular ones

Chúng tôi vui mừng thông báo rằng GS. Trần Công Phong và các đồng nghiệp gần đây đã xuất bản công trình của họ có tựa đề "Electron–interface-phonon interaction strength in Pöschl–Teller quantum wells is enhanced considerably compared to rectangular ones" trên tạp chí Vacuum

Tóm tắt:

We investigated the magneto-optical properties of the Pöschl–Teller GaAs/AlAs quantum well (QW) due to the electron–interface optical (IO) phonon interaction based on the optically-detected (OD) magneto–IO-phonon resonance (MIOPR) effect. The methods of the operator projection and the profile were used to calculate the MO-absorption power (MOAP) and measure the full width at half maximum (FWHM) of the OD-MIOPR peaks. The results are as follows: The well-width (𝐿𝑊), the temperature of the electron–phonon system (𝑇), and the magnetic field (𝐵) strongly affect the MOAP and the FWHM of the OD-MIOPR peaks for both the two emission and absorption cases of IO-phonons in both the materials of the well and the barrier. The FWHMs in both the materials of the well and the barrier for the absorption case of an IO-phonon are bigger than those for the emission case. The FWHM due to IO-phonon interaction in the GaAs material of the well is stronger than that in the AlAs material of the barrier for both the two IO-phonons emission and absorption cases. Especially, the result also showed that the FWHMs in the Pöschl–Teller QW are always bigger than those in the rectangular QW for the two emission and absorption cases of IO-phonons in both the GaAs and AlAs materials of the well and the barrier, respectively. Our specific results are expected to be promising data for potential applications in optoelectronic devices.