Congratulations to Dr. Trinh Dung Chinh on his Research Publication in the Prestigious International Journal: The Journal of Physical Chemistry C
The Institute for Advanced Study in Technology (IAST), Ton Duc Thang University, is proud to congratulate Dr. Trinh Dung Chinh on his latest research published in the prestigious international journal The Journal of Physical Chemistry C – a leading publication of the American Chemical Society (ACS) in the fields of materials science and physical chemistry.
This work demonstrates a successful strategy to decouple competing properties in antimony-doped tin oxide (SnO2:Sb, ATO) thin films prepared via the sol-gel method. Experimental results show that systematic Sb-doping enhances electrical conductivity by over 3 orders of magnitude, with only a minimal 5% trade-off in corrosion resistance. Rietveld refinement analysis reveals the microstructural origin of this behavior: Sb acts as a dual-role agent, simultaneously promoting crystallization (reducing amorphous content from 39.1% to 17.1%) and inhibiting grain growth (reducing crystallite size from 65.4 to 41.4 nm). This creates a dense network of nano-grain boundaries that act as a physical barrier against electrolyte penetration. Furthermore, DFT (Density Functional Theory) simulations rationalize these decoupled properties, revealing that Sb induces bulk metallization while increasing the surface’s intrinsic nobility (work function), which enhances thermodynamic stability. These findings offer a validated pathway for designing multifunctional electrodes where conductivity and electrochemical stability can be optimized independently.
This achievement once again reaffirms the standing and research excellence of the scholars at IAST.
Once again, we extend our warmest congratulations to the authors. We wish you continued passion and even greater milestones in your distinguished research career.
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